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Beilstein J. Nanotechnol. 2020, 11, 770–781, doi:10.3762/bjnano.11.62
Scheme 1: Schematic representation of Ni/CTF-1 composite synthesis via microwave-assisted thermal decompositi...
Figure 1: PXRD patterns of Ni/CTF-1 composite materials. The simulated diffractograms for hexagonal close-pac...
Figure 2: TEM images of Ni/CTF-1-600-22 showing (a) Ni nanoparticles supported on CTF, (b,c) the aggregation ...
Figure 3: SEM images and EDX elemental mappings of Ni for (a) Ni/CTF-1-400-20, (b) Ni/CTF1-400-35, (c) Ni/CTF...
Figure 4: Nitrogen adsorption and desorption isotherms (at 77 K) of Ni/CTF-1 composites.
Figure 5: XPS measurements of Ni/CTF-1-600-22 with deconvoluted Ni 2p (left) (Sat. = satellite) and N 1s spec...
Figure 6: (a) OER polarization curves of various materials, (b) overpotential values calculated from (a); (c)...
Figure 7: Nyquist plots recorded in 1 mol/L KOH solution.
Figure 8: (a) ORR polarization curves of various materials, (b) half-wave potential values calculated from (a...
Beilstein J. Nanotechnol. 2019, 10, 2116–2127, doi:10.3762/bjnano.10.206
Figure 1: Experimental (×) and calculated (—) X-ray powder diffraction patterns of 1-S0 (a) and 2-S2 (b). Pea...
Figure 2: TEM images (a–c) and HRTEM images (d–f) for 1-S0, 2-S0, and 2-S2.
Figure 3: The FTIR spectra of 1-S0, 1-S2 and 1-S5 (a); 2-S0, 2-S2 and 2-S5 (b).
Figure 4: Core-level XP spectra of Ti 2p (a and d), O 1s (b and e) and S 2p (c and f) for 2-S1 and 2-S3. The ...
Figure 5: Valence-band XPS of 2-S0, 2-S0.5, 2-S1, 2-S3 and 2-S5.
Figure 6: The UV–vis DRS of 2-S0, 2-S0.5, 2-S1, 2-S3 and 2-S5. The inset is the magnified plot of the UV–vis ...
Figure 7: The temporal evolution of the UV–Vis spectra during the photodegradation of aqueous MB over the sam...
Figure 8: Nitrogen adsorption–desorption isotherms of samples 2-S0, 2-S and 2-S5. The inset shows the pore si...
Figure 9: The PL spectra of 2-S0, 2-S0.5, 2-S2, 2-S3 and 2-S5 using an excitation wavelength of λex = 300 nm.
Figure 10: ESR spectra of radical adducts trapped by DMPO in 2-S0 (a, e), 2-S2 (b, f), 2-S3 (c, g), and 2-S2 (...
Beilstein J. Nanotechnol. 2014, 5, 964–972, doi:10.3762/bjnano.5.110
Figure 1: Conceptual diagram of a SiNW FET.
Figure 2: Typical measurement system.
Figure 3: Shape of the power spectrum of IRS from 5-bit length shift register.
Figure 4: Schematic of the applied SiNW FET device.
Figure 5: SEM image of the SiNW FET device. The scale bar is 20 µm.
Figure 6: Ids–Vds DC measurement results.
Figure 7: Ids–Vg DC measurement results.
Figure 8: Conceptual diagram of the measurement setup.
Figure 9: Simplified schematic of the measurement amplifier.
Figure 10: Generated excitation sequence; a) sample in the time domain, and b) (scaled) energy content.
Figure 11: Admittance spectroscopy for gate voltages from 1.0 V to 3.0 V.
Figure 12: Admittance spectroscopy for gate voltages of 2.0 V and 2.2 V.